Schottky Diode Design For High Efficiency Rectifier Antennas

With the rapid development of the communication electronics industry,electronic products related to wireless terminals are increasing,so Wireless Power Transfer(WPT)has gradually become a research hotspot in related fields.There are three specific ways to realize wireless power transfer:inductive wireless power transfer,coupled resonant wireless power transfer,and radio wave wireless power transfer.Among them,radio wave wireless power transfer has the most research direction because of its relatively long transmission distance.Nowadays,the efficiency of wireless energy transmission has been very low.Among many reasons,a large part of the reason is caused by the low efficiency of the rectifier circuit at the receiving end.The core rectifier in the rectifier circuit is the rectifier diode.Schottky rectifier diodes are commonly used because of their relatively low on-state voltage drop and fast switching characteristics.But the biggest disadvantage of Schottky rectifier diode is its large leakage current,which causes a lot of energy to be lost by the device during the rectification process.Therefore,a rectifier diode with Schottky barrier is designed based on FD-SOI technology.The parameters of FD-SOI SBD device are simulated and extracted,and the device model is established.The related work is as follows:1.Design and simulate prototypes of Schottky diodes based on FD-SOI technology:Design and compare FD-SOI SBD with conventional Si-SBD.By applying relevant bias voltage to the device,explore the IV under different bias voltage Characteristics and CV characteristics,followed by optimizing the design of FD-SOI SBD related device parameters(epitaxial layer doping concentration,anode size,etc.)to determine the final device parameters,and finally extracting device parameters and related research Compare the results.2.Based on the analysis of the research results of the FD-SOI SBD prototype,the FD-SOI SBD is simulated in parallel according to the parallel idea of the device.A 10×10 array Schottky diode device based on FD-GAOI SBD is designed.3.The parameters of the designed device were extracted and the related rectifier circuit simulation was carried out by using ADS software.The rectifier circuit designed with HSMS-8202 diode is used for simulation and comparison to predict the performance of FD-GAOI SBD.Finally,the rectifier circuit designed by HSMS-8202 diode is compared with the actual measurement and simulation,which further illustrates the reliability of the foregoing simulation results.The simulation and actual measurement results show that for the designed Schottky barrier diode device,the on-resistance of the 10×10 array FD-GAOI SBD is about 5?,the forward voltage V_F=0.26 V,and the zero bias capacitance C_j0=7?F,reverse saturation current I_s=4.6×10^-18A,reverse breakdown voltage V_br=30.4 V,cut-off frequency f _T=4.6THz.In the voltage doubler rectifier circuit based on the HSMS-8202 diode design,when the input power P_in=22 d Bm,the corresponding rectification efficiency is up to?=69.7%,and the input power range corresponding to the simulation rectification efficiency greater than 50% is 11 d Bm to 24 d Bm,?P_in,50=13 d Bm;while in the voltage doubler rectifier circuit based on FD-GAOI SBD,when the input power P_in=18 d Bm,the corresponding rectification efficiency reaches a maximum of?=80.3%,and the simulation results show that the rectification efficiency is greater than The corresponding input power range of 50% is 6 d Bm to 21 d Bm,?P_in,50=15 d Bm.The actual measurement results of the voltage doubler rectifier circuit designed by HSMS-8202 diode show that when the input power Pin=22 d Bm,the corresponding rectification efficiency reaches?=58.6%,the difference between the highest efficiency reaches??=11.1%,and the rectification efficiency is greater than 50%.The corresponding input power range of 50% is 15 d Bm to 24 d Bm,?P_in,50=9 d Bm.