Simulation And Design Of 1200V MPS Diode

With the development of power electronic technology,power semiconductor device is required highly which promotes the generation of novel power semiconductor device.Merged PIN-Schottky power diode is embedded with P+islands at the anode of Schottky diode.Because of the interaction between Schottky and P+region,the device performance of Merged PIN-Schottky diode is more superior than the structure which directly parallel connect the PIN and Schottky diode.It has not only low cut-in voltage,short reverse recovery time,low reverse recovery peak current of Schottky diode but also high reverse breakdown voltage of PIN diode.It can be used better in the high temperature and high frequency system because of its superior properties.For fabricating Merged PIN-Schottky diode device with high performance,this paper design the device structure through the simulation of the Merged PIN-Schottky diode characteristic by using device simulation software.First of all,the physical model chosen for the simulation is analyzed and the characteristics of Merged PIN-Schottky diode is simulated,then the simulation result is compared with the theoretical analysis to make sure the validity,based of which,optimization scheme can be determined.Further more,device performance is optimized by designing the structure parameters of 1200 V Merged PIN-Schottky diode,selecting the suitable trade-off curve to confirm the device structure parameters,such as thickness and doping concentration of drift region,horizontal proportion of Schottky and P+region and cellular size.Thirdly,analyze the influence of device performance made by contact work function and carrier lifetime of drift region using simulation software,then,give the range of reference data applying to optimize device performance.Fourthly,the simulation of technology design and technology conditions is performed,the technology parameters are provided.Finally,design the layout which is needed in the process of the device processing fabrication.The design of 1200 V Merged PIN-Schottky diode is completed in this paper where the whole process of device design is introduces systematically,which provide a reference thought and method for similar device designs and researches of Merged PIN-Schottky diode.