Analysis And Design Of A Bipolar Photoelectric Memristor Based On Avalanche Effect

In recent years,as a new type of non-linear passive two-end electrical component,memristors have a wide range of applications in non-volatile random access memory,artificial neural networks,chaotic circuits,and other fields by virtue of their unique memory characteristics and nanostructures.However,due to the high technical difficulty and high cost of manufacturing nano-devices,memristors are currently only in experimental research and cannot be mass-produced on a large scale.The SPICE model of the memristor is usually constructed with passive electronic components and controlled sources such as resistors,capacitors,and inductors.In this paper,the mathematical model and physical model of the memristor are established based on the physical characteristics of the memristor.A bipolar photo-memristor based on the avalanche effect is built on the Cadence platform through a single photon avalanche diode(SPAD)Simulation experiments show that the proposed circuit structure has the characteristics of a generalized memristor.(1)This article mainly designs and implements a high-performance photoelectric detector for the detection of high-speed,weak visible light and near-infrared light.First,the working principle and main performance indicators of the photodetector are analyzed,and the parameters of the photodetector such as I-V curve,the photon detection effiency,responsivity and dark rate are explained in detail.Secondly,the structure and performance of the designed photodetector have been optimized on the basis of a thorough investigation of the literature.Finally,through optoelectronic device structural design,Silvaco TCAD simulation,Cadence layout design and layout verification,based on Macronix's(MXIC)0.18 ?m CMOS process,a model with high edge breakdown,high responsivity,extended spectrum,low dark count and high-speed characteristic circular p+/deep n-well single-photon avalanche diode(SPAD)photodetector device was designed.(2)Based on the avalanche photoelectric effect of the designed photodetector,combined with the unique physical characteristics of the memristor,the research and design of a bipolar photomemristor based on the avalanche effect has been completed.First,the equivalent circuit model of the single-photon avalanche diode is built,and the working principle of applying the single-photon avalanche diode to the passive avalanche quenching circuit is analyzed in detail,and then the voltage and current change waveforms at the anode of the unidirectional model are obtained.After processing the data,the volt-ampere characteristic curve at the anode of the unidirectional model is finally obtained.Secondly,based on the full study of the equivalent circuit model of the single-photon avalanche diode,a new equivalent circuit model with bidirectional conduction function is proposed.The Cadence simulation software verified its correctness and optimized its design parameters.Finally,the proposed new two-way equivalent circuit model is applied to the passive avalanche quenching circuit under the same parameter conditions,and after the same treatment,the volt-ampere characteristic curve at the anode of the two-way model is finally obtained,which is a beautiful tight hysteresis loop,thus,the design of bipolar photoelectric memristor is realized.