Preparation Of Sb₂(S,Se)₃ Thin Film By Sol-Gel Selenization Method And Its Application In Solar Cell

With the rapid development of society,the consumption of conventional energy is increasing,and the development of new energy such as renewable energy has become an important measure to deal with the problem of energy shortage.At present,the country and society continue to inject fresh blood into the photovoltaic industry,making photovoltaic solar cells flourish.Today,the development of crystalline silicon solar cells has matured,and new inorganic semiconductor thin film materials are becoming a new focus.Among them,antimony-based thin film materials represented by Sb₂S₃and Sb₂Se₃have broad application prospects in the new solar cell industry due to their abundant materials,low toxicity,high light absorption coefficient and excellent optoelectronic properties.But the band gap of Sb₂S₃is wider about1.7 e V,and the band gap of Sb₂Se₃is narrower about 1.1 e V.Therefore,the Sb₂S₃precursor film can be prepared by the sol-gel method,and then selenized by Se powder to obtain a bandgap-tunable Sb₂(S,Se)₃ternary compound film to enhance the light absorption of the film.Therefore,in this paper,the effects of different Sb₂(S,Se)₃film preparation process parameters on the structure,morphology and optoelectronic properties of Sb₂(S,Se)₃film were studied mainly through the exploration of the preparation process of the precursor film and the post-selenization treatment process.The prepared Sb₂(S,Se)₃thin film was applied in a thin film solar cell with a structure of FTO/Ti O₂/Sb₂(S,Se)₃/C,and a certain conversion efficiency was achieved.Firstly,the Sb₂S₃precursor thin films prepared by sol-gel method were prepared by different treatment methods(only annealing treatment,surface thioacetamide treatment and then annealing treatment,post-selenide treatment)to prepare Sb₂S₃,Sb₂S₃(TA)and Sb₂(S,Se)₃three kinds of thin films,and then through the characterization of the three thin film performance parameters to explore the effect of surface treatment and post-selenide treatment on the properties of Sb₂S₃thin films prepared by sol-gel method under environmental conditions.Characterized by XRD,Raman,SEM,EDS,UV and photoelectrochemical tests.It was found that the performance of the absorber layer film can be improved by surface treatment and post-selenization treatment,and the surface-treated film will become denser;but the Sb₂(S,Se)₃film prepared by post-selenization treatment,The structure is more conducive to carrier transport,more sufficient in light absorption,and the improvement of optoelectronic properties is more significant.To explore the effects of different preheating temperatures and different spin coat numbers on the properties of Sb₂(S,Se)₃ thin films Impact.The analysis by XRD,Raman,SEM,EDS,UV and photoelectrochemical tests showed that when the preheating temperature was 200?and the number of spin-coating layers was 2(0.43?m),the properties of the prepared Sb₂(S,Se)₃thin films were the best,the photocurrent density is the largest,the dark current is relatively stable,and the cell efficiency is the highest of 0.4730%.Explore different selenization temperatures,different selenization times,and different amounts of selenium powder of the selenization process on the properties of Sb₂(S,Se)₃thin films.The analysis by XRD,Raman,SEM,UV and photoelectrochemical tests showed that the best properties of the prepared Sb₂(S,Se)₃thin films were obtained when the selenization temperature was300?,the selenization time was 6 min,and the amount of selenium powder was 0.0078 g.The Sb₂(S,Se)₃thin-film solar cells were fabricated using the optimal process parameters of selenization.The open-circuit voltage was0.2509 V,the fill factor was 32.6587%,the short-circuit current density was12.7638 m A/cm~2,and the cell efficiency was 1.0462%.After a series of process explorations,the efficiency of Sb₂(S,Se)₃thin-film solar cells increased from the initial 0.3776%to 1.0462%,and made great progress.