Application Technology Research Of Semiconductor Limiting Protection Under Strong Electromagnetic Pulse

In recent years,under the threat of increasingly severe and complex electromagnetic environment,the highly sensitive low-noise amplifiers,mixers and other digital control circuits of the receiver RF front-end represented by wireless communication electronic equipment are more susceptible to electromagnetic pulse interference and damage.In order to ensure the normal operation of the equipment,a limiting protection component is usually added between the antenna of the equipment and the receiving module to protect the sensitive components of the receiver from being damaged by electromagnetic pulses.Due to the rise of research on ultra-broad-spectrum high-power microwave in recent years,this thesis studies the performance of non-punch-through PIN diodes in the environment of ultra-widespectrum high-power microwave electromagnetic pulses from the perspective of ultra-widespectrum high-power microwave electromagnetic pulse protection.Limiting characteristics and damage mechanism,designing an RF front-end protection module that can protect against ultra-wide spectrum high-power microwave is of great significance for improving and optimizing RF front-end protection technology.This paper first analyzes the time-frequency domain characteristics of ultra-wide-spectrum high-power microwave electromagnetic pulses and the damage effect of the front door coupling characteristics on the RF front-end sensitive circuits and sensitive devices.Based on the protection idea of adding a protection module in the RF front-end link,through the protection The principle research of the protective device in the module,combined with the similarities and differences between the punch-through PIN diode and the non-punchthrough PIN diode and their protection advantages against different pulses,establishes the design idea of using the non-punch-through PIN diode as the protection core device.According to the semiconductor physics equation,the calculation formula of the intrinsic layer doping concentration of the punch-through PIN diode is derived,and the identification method of the punch-through PIN diode and the non-punch-through PIN diode is given,which solves the difficulty of identifying the type of diode produced by the manufacturer.Subsequently,the concentration formula was revised based on the difference between the two processes,and the formula for calculating the doping concentration of the I layer of the non-punch-through PIN diode was given,which solved the modeling difficulty of the nonpunch-through PIN diode.At the same time,based on this formula,the simulation software Silvaco-TCAD was used to establish a numerical physical model of the non-punch-through PIN diode,and the response characteristics and damage characteristics of the non-punchthrough PIN diode under ultra-wide-spectrum high-power microwaves were simulated through the model.The research analyzes the response law of the device under ultra-wide spectrum high power microwave and the relationship between the rising edge,isolation and the intrinsic layer thickness of the diode during the response process.The effect of ultrawide spectrum high-power microwaves on the temperature rise of non-punch-through PIN diodes is investigated.According to the research,the response,damage and selection rules of non-punch-through PIN diodes are summarized.The current research on non-punchthrough PIN diodes in ultra-wide spectrum high-power microwaves has been supplemented to a certain extent.Then,according to the advantages of common protection module forms,the scheme design of the ultra-wide spectrum high power microwave radio frequency frontend protection module and the specific selection of the components were carried out,and the protection module was simulated and checked with TCAD software,and the protection module was made according to the selection design in the final stage.The actual product has been tested and verified by steady-state and transient effects,which provides an effective protection method for the RF front-end protection of ultra-wide spectrum high-power microwaves.Non-punch-through PIN diodes will produce large peak leakage under ultra-wide spectrum high-power microwaves,peak leakage and isolation will increase with the increase of pulse amplitude;the case of changing the rising edge is in the forward conduction characteristic the peak value of the lower spike leakage increases as the rising edge becomes steeper,and the isolation increases as the rising edge becomes slower.The non-punch-through PIN diode that uses the reverse breakdown characteristic does not significantly change the two response characteristics.At the same time,the polarity of the non-punch-through PIN diode and the thickness of the I layer will also affect the peak leakage and isolation.The thinner the thickness of the I-layer,the smaller the peak leakage of the non-punch-through PIN diode and the greater the isolation.At the same time,the forward conduction performance is much better than the reverse breakdown performance.The peak leakage peak value of the nonpunch-through PIN diode using the reverse breakdown characteristic is greater than the peak leakage peak value of the non-punch-through PIN diode using the forward conduction characteristic under the same circumstances,and the degree of isolation is much smaller than the forward conduction characteristic.According to the relationship formula between the thickness of the I layer and the isolation,it can be known that the change of the thickness of the I layer under hundreds ps pulse has little effect on the isolation.According to the relationship formula between the rising edge of the pulse and the thickness of the I layer,the non-punch-through PIN diode with the thinner the I-layer thickness can respond to the pulse with the steeper rising edge,and the polarity of the non-punch-through PIN diode will also make the response different.A diode with a forward conduction effect is easier to respond to a pulse with a steeper rising edge than a diode that uses the reverse breakdown effect.Through the analysis of the thermal damage characteristics of non-punch-through PIN diodes under ultra-broad-spectrum high-power microwaves,it is found that the pulse amplitude is one of the main factors affecting the temperature rise.The larger the amplitude,the more obvious the temperature rise effect.At the same time,the thickness of the I layer and the polarity of the diode will also affect the temperature rise of the junction.In the forward case,the thicker the thickness of the I layer,the more obvious the temperature rise effect.In the reverse case,the thinner the thickness of the I layer,the more obvious the temperature rise effect.