Research On Package Structure Optimization And Heat Dissipation Characteristics Of High Power Semiconductor Laser

With the continuous progress of modern science and engineering technology,people have put forward higher requirements for the output power and working reliability of semiconductor lasers.As the output power of semiconductor lasers continues to increase,the waste heat generated inside the chip is also gradually increasing,which seriously affects the output characteristics and reliability of semiconductor lasers.Therefore,in order to further improve the performance of semiconductor lasers,optimize the heat dissipation package structure of semiconductor lasers,and study the heat dissipation characteristics of semiconductor lasers,it has very important technical foresight and practical significance.Based on the basic requirements of the thermal characteristics of high-power semiconductor lasers,the influence of temperature on threshold current,output power,thermal stress,life and other characteristics is studied.The theory of heat transfer involved in semiconductor lasers is described,and the ANSYS finite element software used in this thesis is briefly introduced.The research content of this thesis can be divided into the following two aspects.(1)In order to reduce the temperature of the active area of the single diode laser emitters and improve the reliability of the packaged device,based on the COS package,The ANSYS finite element software is used to analyze the heat dissipation and stress of the semiconductor laser under traditional epi-up packaging and epi-down packaging.The traditional packaging structure is optimized,and graphene-based film with high thermal conductivity is used as an auxiliary heat sink.An optimized package structure model is established using Solidworks Simulation software.The structure uses graphene-based film to increase the lateral heat dissipation channel of the semiconductor laser.At the same time,the epi-up packaging method is adopted to reduce the stress of the semiconductor laser,and the purpose of reducing the temperature and thermal stress of the active region of the semiconductor laser is realized.(2)In order to save the packaging space of semiconductor lasers,reduce the difficulty of spatial combining and coupling of single-tube semiconductor lasers,and increase the output power of multiple single-tube semiconductor lasers.The package structure is optimized and a packaging structure with vertically stacked arrangement of multi-single emitters diode lasers is proposed.The finite element analysis software is used to analyze the heat dissipation characteristics of the structure.With ZEMAX optical design software,3single emitters diode lasers are coupled into a fiber with core diameter of 200 μm and NA of0.22.The simulation results of the maximum output power of 28.6 W.The purpose of simplifying the coupling optical path in a smaller design space and increasing the output power of the semiconductor laser to make the device more stable is realized.