Research On Thermal Characteristics Of Semiconductor Laser Based On ANSYS

With the development of semiconductor lasers are widely used,demand for power is more and more high,waste problems have also become more serious,leading to the negative effect of active region temperature,electro-optical conversion efficiency and reduce the lasing wavelength redshift,the rapid increase in the threshold current at the same time laser,external differential quantum efficiency decreases rapidly,leading to rapid change of small output power.Therefore,to solve the heat dissipation problem,it is very important to study the thermal characteristics of the semiconductor laser.In this paper the basic theory of heat transfer,combined with the physical theory of semiconductor laser device,through reasonable approximation and hypothesis,a theoretical analysis model of thermal characteristics of semiconductor laser conduction cooling type high power semiconductor laser,because the temperature rise caused by wavelength,threshold current,output power,conversion efficiency and variation characteristics of simulation and optimization of the combination of.In order to reduce junction temperature,improve heat dissipation and improve output power of single diode laser,a step structure C-mount heat sink laser packaging structure and a new package structure with vertical chip encapsulation are designed.The analysis and Simulation of the thermal effect of the cavity of the semiconductor laser layer is also analyzed.The conclusion proves the importance of the cavity rate control.Finally,the thermal characteristics of the array bar laser are analyzed.Based on the analysis conclusion,the optimized bar package structure is proposed,which greatly improves the heat dissipation effect and has important practical significance for improving the device performance.