Research On High-current And Narrow-Pulsed Power Supply System Of Semiconductor Laser

The excellent performance of semiconductor laser has made it widely used in many fields,especially in military,medical,industrial and other fields.With the development of science and technology in recent years,the demand for semiconductor lasers is increasing day by day,and it can be seen in daily life.The excellent performance of semiconductor laser also has a high demand for the driving circuit.Only when the driving circuit meets its needs,can the semiconductor laser play a real role.After referring to the development of many manufacturers and the development of semiconductor laser drive circuit at home and abroad,this paper proposes a set of improvement scheme.After the analysis and improvement of the circuit,the experimental results can meet the design goal requirements.Firstly,the characteristics of semiconductor laser are analyzed.After comparing several driving modes,the pulse driving mode is selected.This driving mode can not only supply the injection current pulse with larger amplitude,but also better meet the characteristics of semiconductor laser.It can output a large current amplitude and have a narrow pulse width.The experimental results of this driving mode are closely related to the selection of high-speed switches.After comparison,we decide to use the most FET device de150 as the high-speed switch element.The narrow pulse width forming circuit uses 555 timer and74ls123 monostable trigger circuit.The combination of the two chips can change the pulse width as required,and can also play a role in shaping the waveform.Secondly,the paper analyzes the energy storage circuit around the problem of pulse width and the coordination between pulse trigger period and discharge time.The analysis of discharge circuit focuses on how to further increase the amplitude of pulse current and shorten the pulse width.But through the analysis of the characteristics of laser diode,its temperature characteristics must also meet the conditions.Therefore,PID temperature control circuit is designed to ensure the stability of thermal insulation.Finally,the paper carries on the simulation of the experimental circuit,and verifies the assumption proposed in the previous paper on the basis of the experimental results.Although the parameters of the storage capacitance,variable resistance and sampling resistance are adjusted,some experimental results can basically reach the design goal.But in some indexes,it can not achieve good results.After adding complementary symmetrical circuit to drive circuit,the waveform becomes smooth and the rising time is shortened,which is basically in line with the design goal.After changing the pulse width,the pulse current under each pulse width is measured to ensure that the output current amplitude reaches the design goal when the pulse width can be adjusted.The experimental results show that the driving control scheme of the high current narrow pulse semiconductor laser can achieve the design goal and meet the design requirements.