GaAs Film Grown On Conducting Glass And Si By Hot Wall Epitaxy

GaAs polycrytalline thin films with good performance were prepared on conducting glass and Si by hot wall epitaxy (HWE) , which were suitable for solar cell . Electron probe micro-analyzer (EPMA)was applied for the component , surface and cross-section mrophology of grown films , and X-ray diffraction (XRD) for their structure ; Raman scattering spectrum(RSS) and photoluminescene(PL) were used for evaluating their optical characteristics . We also study electrical characteristics of films. The results are shown that , there is textured surface and columnar grain of grown GaAs polycrystalline thin films , which are greatly promising to become the candidate of solar cell with low cost and high efficiency. Meanwhile, by analyzing the effect of procedure on films feature all-sidely , it was obtained , that is source temperature should be 930℃, substrate temperature should be 500℃ for conducting glass and source temperature should be 900 ℃ , substrate temperature should be 700℃ for Si.