| This thesis focuses on Schottky rectifier device physics and their application to the development of power and high temperature Schottky rectifiers. The topics covered are divided into three main areas; materials for high temperature Schottky rectifiers, device physics and structures for power Schottky rectifiers, and materials for power Schottky rectifiers. First, metal-diamond-like-nanocomposite and polysilicon SiC high temperature Schottky contacts are reported. Contacts fabricated from both materials show excellent thermal stability and near-ideal rectifying characteristics. Second, power SiC Schottky rectifiers with near-ideal forward characteristics and a breakdown voltage of 1720 V are reported. A detailed analysis of SiC Schottky rectifier reverse bias leakage current is also presented. Based on the reverse leakage current analysis, a novel rectifier structure called the dual-metal-trench (DMT) Schottky rectifier is proposed. Fabricated DMT devices are shown to have forward characteristics of a small Schottky barrier and reverse characteristics of a large Schottky barrier. Third, a brief investigation of power device figures of merit for semiconductor materials is presented and a dual-material GaInP on GaAs power device structure is propose. The GaInP on GaAs structure has a calculated figure of merit which is approximately 60 times better than Si and 4 times better than GaAs. Schottky rectifiers fabricated with the GaInP on GaAs structure are shown to have a factor of four improvement in breakdown voltage over GaAs devices. Finally, suggestions for future directions of power Schottky rectifiers are given. |
