Equivalent circuit development for wave-guiding structure on semiconductor substrate

Electromagnetic wave interactions with free charges in semiconductor materials distinguish themselves from others electromagnetic waves mediated by dielectrics. The presence of mobile charges leads to both dissipation in energy carried by the wave through conduction current and screening of the field from penetrating the semiconductor interior. The latter has an effect on the transverse component of the electric field where a rapid decay of the electric field amplitude will take place. An analysis of electromagnetic wave interaction at the semiconductor surface based on a charge transport model and full wave approach is the main objective of the thesis.; In this work, a full wave analytic solution based on a small signal approximation of dominant TM wave supported by MIS structure has been obtained. The analysis represents all the wave parameters such as propagation constant, wave number in each direction, charge and field distribution and wave impedance. Computational outcomes led to the development of a distributed circuit model in which each element can be justified by the physical process of the charge field interaction. The obtained circuit model provides less for computational effort and can be incorporated with other device models for complete system analysis. In another case of study, a full wave solution for surface wave propagation in a semiconductor planar structure, such as a semiconductor half plane and grounded semiconductor slab is also presented. The latter has the advantage of accurately accounting for the signal loss due to leakage into the surface wave modes in a microstrip Transmission Line. A distributed circuit model for each structure has been developed.