| The electrical properties of nanowire-based n-InSb- n-InAs heterojunctions grown by chemical beam epitaxy were investigated both theoretically and experimentally. This heterostructure presented a type-III band alignment with the band bendings at 0.12 eV for InAs side and 0.16 -- 0.21 eV in InSb. Analysis of the temperature dependent current voltage characteristics showed that the current through the heterojunction is caused mostly by generation-recombination processes in the InSb and at the heterointerface. Due to the partially overlapping valence band of InSb and the conduction band of InAs, the second process was fast and activationless. Theoretical analysis showed that, depending on the heterojunction parameters, the flux of non-equilibrium minority carriers may have a different direction, explaining the experimentally observed non-monotonic coordinate dependence of the electron beam induced current at the vicinity of heterointerface. |
