Study On Photoelectric Characteristics Of Amorphous InSb Detector Material

Compared with crystalline InSb material,amorphous InSb material has some attractive characters such as low cost and easy preparation process. But amorphous InSb is still lack of systematic and detailed study. In this paper, our study on amorphous(a-) InSb films includes the preparation, characterization, and hydrogen passivation.Based on the studies of material growth mechanism, We have deposited a-InSb flims by RF magnetron sputtering.We have characterized structure, surface morphology and composition of amorphous films by means of X-ray diffractometer (XRD), scanning electron microscopy (SEM) and electron diffraction spectroscopy (EDS). Through the systematical study the effect of sputtering parameter on the structure,surface morphology and composition, we have prepare amorphous films with better surface morphology. We characterize the optical properties of a-InSb thin films by spectrophotometer and the ellipsometry. And we study the electrical properties and photosensitive properties. a-InSb thin films have obvious photosensitive properties at light.In addition, We have deposited a-InSb:H films. We investigated the influence of doping hydrogen on the photoelectrical properties.We found the passivation of hydrogen on the amorphous films.