| The subject of the present thesis is the thermal annealing of damage produced by low energy implantation of silicon, using for the first time the nanocalorimetry technique. This technique works following similar principles as differential scanning calorimetry, but the small addenda and the high temperature scanning rate make the technique orders of magnitude more sensitive to low energy (≤30 keV), low fluence (<1012 at/cm2) implantations, and can be used in-situ, opening the door to low temperature measurements.; Nanocalorimetry measurements showed that the kinetics of the heat release during the annealing of ion-implanted poly-Si is independent of fluence and energy. This strongly suggests that most of the rate of heat released during the annealing can be described as a process internal to the damage zones produced by each ion. The heat release uniformity shows that the process goes through a large variety of steps, and can be explained by the fact that the annealing kinetics primarily depends on the details of the damage zone interface to the surrounding crystal. We showed also that the total heat saturates around 4 x 1014 ions/cm2, which is consistent with other measurements made by Raman spectrometry and reflectometry performed on implanted polycrystalline silicon in the same conditions. However, RBS measurement show that we are far from complete amorphisation even at 8 x 1014 ions/cm2.; The nanocalorimetry measurements at low temperature showed that poly-Si and a-Si are similar from the damage accumulation point of view. This was supported by reflectometry measurements performed on both materials implanted in the same conditions.; Keywords. silicon, ion implantation, annealing, damage evolution, nanocalorimetry, silicon nitride membranes. |
