| The work presented in this thesis consists of studies of non-linear properties of self assembled InAs/GaAs and In0.6Ga0.4As/GaAs quantum dots. The non-linear properties of quantum dots are directly related to the optical anisotropy of the dots, which is due to the presence of delta-like density of states within the dots. A background of different growth mechanism, properties, and characterization techniques is given in this thesis. Strain calculations were performed on these structures, and were ultimately used to determine the electronic band structure of the dots.; Special emphasis is given to polarization dependent photoluminescence technique. The results of these measurements were used to calculate linear and quadratic electro-optic coefficients of the two different self assembled quantum dot systems. The calculated values are compared to those reported for Lithium Niobate, which is the material of choice for electro-optic modulators. Finally, it is suggested that the use of self assembled InAs/GaAs and In 0.6Ga0.4As/GaAs quantum dots in the device active regions will enhance the functionality of the next generation of electro-optic modulators. |
