| Intrachip optical interconnects have begun replacing electrical wires in long distance, backplane applications. As their switching speed and efficiency improves, optical interconnects will penetrate deeper into the device architecture for inter- and intra-chip communications where direct integration with silicon microelectronics is a necessity. Silicon-based electro-optical modulators will likely become an essential element of intrachip optical interconnects, enabling ultrafast data transmission by means of light.; This work focuses on the analysis, fabrication and characterization of silicon-based electro-optical modulators. The International Technology, Roadmap, for Semiconductors (ITRS) is used as a reference to explore the requirements that silicon-based optical interconnects must satisfy to successfully outperform copper electrical interconnects. Based on these requirements, silicon-based electro-optica1 modulators are identified as a bottleneck in the development of optical interconnects. Silicon-based modulators can be of two types--- intrinsic and extrinsic modulators. A closed-form model of a capacitor-based intrinsic electro-optical modulator is derived using fundamental laws of electromagnetics and solid state physics. This model provides insight into the principles of modulator operation, and describes a technique to analytically optimize modulator performance.; Tunable 2-D photonic bandgap (PBG) structures are used as a platform for silicon-based extrinsic modulators. Electrical tuning of high-contrast PBG structures is required for such PBG structures, and can be achieved by infiltrating passive semiconductor optical structures with an active optical material. In this work we analyze electro-optical material switching in such structures and suggest design rules to allow for electrical tuning. In particular, a design concept that eliminates electric field screening is proposed for the first time. The developed rules and concepts are used for electrical tuning of liquid crystals inside 2-D PBG porous silicon structures. The design rules can be applied across different combinations of semiconductor PBG structures and active optical materials. Finally, the concepts developed in this thesis are used for the design, fabrication and characterization of integrated tunable 2-D PBG structures infiltrated with liquid crystals.; Demonstrated electro-optical modulators can offer an inexpensive and versatile way of integrating optical interconnects with standard microelectronic circuits. |
