| Reactive-ion etching (RIE) is an essentially physical etching technique, which adds the properties of a classical pure chemical etching and a pure physical etching.;The goals of this thesis were to set up the procedure of reactive-ion etching of gallium arsenide (GaAs) wafers at the new UB's electrical department RIE system purchased from Torr Inc, NY.;The preliminary results of GaAs wafers were obtained. These etched wafers were studied using atomic force microscopy and conclusions were made, as well as recommendations for RIE etching procedure. |
