Through-hole Etching Technology Applications

Increasing levels of integration and line-width shrinking in very large scale integrated circuit design and fabrication are placing increasing demands on micro-through-hole fabrication technologies, which are required to overcome the upper limits of the widely used, conventional reactive ion etching in fabrication feature size smaller than 0.25μm on Si wafers 200 mm in diameter. In this paper we successfully developed one 0.18μm production on TEL IEM equipment etching flat that was used to application for 0.35～0.55μm through-hole etching. From new recipe set up to final application in mass production, we through several experiment turns to solve etching stop phenomenon and met defined profile and critical dimension target. The currently through hole of the plasma etching technologies progress were discussed.