Research And Design Of Power Divider Based On TGV/IPD Process

The current mobile device and IoT(Internet of thing)device market is experiencing unprecedented high growth.Although digital circuits continue to increase integration under Moore's Law,RF circuits cannot be scaled down in the same proportions.Therefore,the further integration of RF circuits,especially passive components,has become the key to System In Package(SiP)technology.Recently,Though glass via technology has been recognized as one of the most promising technologies for implementing integrated,low cost and high performance passive devices.Compared to two-dimensional planar inductors,three-dimensional inductors using TGV(Through Glass Via)structures have better Q factors.Compared with silicon,glass has a lower dielectric constant and a higher resistivity,and thus has better high frequency performance.Passive devices such as filters and duplexers constructed using TGV can be small in size while ensuring small in-band insertion loss and large out-of-band rejection.In this paper,the advantages of glass materials are introduced in detail,and the structure lumped parameter model of TGV is given.The reason why glass vias are better than silicon vias is analyzed in essence.The key processes of glass via implementation and forming and via plating are discussed,including the implementation of TGV/IPD(Integrated Passive Device)related processes.The TGV inductor composed of through-hole and RDL(Redistribution Layer)layer is proposed.By establishing a full-wave electromagnetic field simulation model,the advantages of TGV inductor relative to the traditional LTCC(Low Temperature Co-fired Ceramic)multilayer inductor and the planar spiral inductor used in the silicon-based/ glass-based IPD process are studied.The main loss mechanism of the TGV inductor and the influence of the geometric parameters of the TGV inductor on the inductor parameters are also studied.The lumped components based on the TGV/IPD process are designed with three power dividers for different applications,which has outstanding advantages compared to the power dividers of the common high-resistance silicon IPD process.