Research On 2-18GHz Ultra-wideband Power Amplifier

With the rapid development of communication technology,the increasing data transmission rate has put forward higher requirements for the bandwidth of the electronic system.Power amplifier is the core component of the RF,whose performance influences the use of the whole system.Therefore,the importance of UWB power amplifier in the field of communication is obvious,and there is great value on researching and developing it.This paper introduces a 2-18GHz UWB power amplifier,which is designed based on the research home and abroad and requirements of the index,First,the present situation of UWB power amplifier is introduced with the analysis of the design index.And to understand the device parameter characteristics of GaN HEMT,last stage power amplifier transistor TGF2023-02 is researched by modeling the small and large signal and extracting the parameter of it,and the extraction parameters are applied in the circuit design.Secondly,this research applies a cascade of three stage amplifiers for the index.The gain level amplifier uses HMC797A MMIC amplifier of ADI company.And driving stage and final stage power amplifier use TGF2023-01 and TGF2023-02 GaN HEMT as the core,and adopting the distributed structure and gradual transmission line theory.In the ADS 2015 simulation software,the DC,small signal S-parameters,load-pull,harmonic balance and layout-schematic diagram are stimulated for the driving and final power amplifiers of the distributed structure.Besides,the structure of the cavity is designed with considering the assembly and heat dissipation,and the thermal simulation in the ANSYS software is made based on the structure of the cavity.Finally,the single layer PCB circuit board are used in the optimized simulation data,and finally realizing the ultra-wideband power amplifier by the micro assembly process.The results show that the design of UWB power amplifier in the 2-18GHz bandwidth;the average output power is 8W;the maximum output power is above 10W;the minimum efficiency can reach 23%;the input reflection coefficient is below-1OdB;the Gain in full band are above20dB;the Gain within 2-16.5GHz is 26.5±2.5 dB,which has certain practical application significance.