Research On Improvement Of Discrete Geometry Method For Parasitic Capacitance Parameter Extraction

With the continuous development of integrated circuits,the number of transistors has increased,and the device size of integrated circuits has been continuously reduced.At present,the mass production process of integrated circuits has been reduced to the nanometer level.At the same time,the size of interconnect lines is also shrinking.In the integrated circuit process system,process technology and materials will affect the electrical parameters of interconnect lines,and the influence of interconnect lines will also make it difficult to evaluate the performance of the final integrated circuit chip.And the decline in chip yield.In the current nanometer chip design,accurate calculation of interconnect delay is critical to the performance evaluation of the chip,and interconnect parasitic parameter extraction has become an important research topic in integrated circuit design.This paper proposes an improved method for extracting parasitic parameters by discrete geometric method.In this paper,the discrete geometry method that using the outer center as the reference point to construct the dual grid algorithm need to be improved.Discrete geometry method needs to discretize the solution area.If the local grid unit is not good after the discretization process,the center of gravity or other centroid of the grid unit is used to construct a dual grid to modify and replace the algorithm.Lattice and dual grids use scalar bits as unknowns to construct a constitutive matrix.The constitutive matrix will still have positive definiteness,which can improve the convergence of the iterative method to solve the constitutive matrix constructed by the original discrete geometry method.Introduce the weight-based Hodge operator into the electromagnetic field solution,weight the discrete element grid,use the weighted outer center to construct the dual grid,and then use the discrete geometry method to calculate,so that there is no need to the grid is corrected.In order to verify the effectiveness of the extracted improved discrete geometry algorithm,and to observe the energy complementary characteristics of the original grid and the dual grid,and to investigate the application of the improved algorithm in the extraction of parasitic capacitance parameters,this article has been listed Some examples are given to verify the improved algorithm.