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Mechanism Of The Influence Of Nb2O5 On The Luminescent Properties Of Semiconductor Materials The Study

Posted on:2021-05-11Degree:MasterType:Thesis
Country:ChinaCandidate:D N LiuFull Text:PDF
GTID:2428330626964987Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
The surface enhancement effect of the base material and the coated nanomaterials can increase the luminescence spectrum intensity of the detected substance or molecule by several orders of magnitude,This feature has been widely concerned by researchers at home and abroad in the field of Raman enhanced spectroscopy and has been widely used.In recent years,the research and application of surface-enhanced spectroscopy technology for semiconductor materials has gradually attracted the attention of researchers at home and abroad.The study found that by using various special semiconductor materials to coat or modify the tested materials,Can greatly increase the fluorescence and infrared spectrum intensity of some detected objects,This technology has important research value and application prospects for material analysis and trace detection.At present,there are few reports and studies on the fluorescence enhancement effect on the semiconductor surface,the theoretical mechanism of the fluorescence enhancement effect and the depth of experimental research need to be improved.In this paper,by using n-type Nb2O5 as the substrate and cladding material,Using radio frequency magnetron technology to coat and modify Nb2O5 film on ZnO nanowire,TiO2 nanostructure,SnO film and Ga2O3 film,Experimentally and theoretically studied before and after coating and modifying Nb2O5 film,Variation characteristics of different materials' morphology and microstructure photoluminescence intensity,The physical mechanism of the surface-enhanced fluorescence enhancement of the nanostructure surface was analyzed.The main research work of the thesis is as follows:?1?Adopting hydrothermal synthesis method,Under different conditions,oriented ZnO and TiO2 nanowire arrays were prepared.The effects of ammonia concentration and reaction time in hydrothermal synthesis on the structure and morphology parameters of the growing oriented ZnO and TiO2 nanowire arrays were studied,The goal of adjusting the growth orientation ZnO and TiO2 nanowire array morphology and photoluminescence characteristics by changing the preparation parameters was achieved.?2?Using magnetron sputtering technology,Using Nb2O5 as the target,by adjusting the sputtering time and sputtering power,On the samples of different ZnO and TiO2 nanowire arrays prepared earlier,a layer of Nb2O5 thin films with different thicknesses was sputter coated.The microstructure of the samples before and after sputter-coated Nb2O5 thin film was tested by XRD test technique.The test compared the photoluminescence characteristics of thesamples before and after being coated with Nb2O5 film.The study found that by controlling the sputtering time,The thickness of the coated Nb2O5 film can be controlled,The ZnO and TiO2 nanowire array samples are different,the thickness of the coated Nb2O5 film is different,and the photoluminescence characteristics are also different.Coated Nb2O5 film can effectively enhance the luminous intensity of ZnO and TiO2 nanowire array samples.?3?Using magnetron sputtering technology,First,SnO and Ga2O3 films with different thicknesses were deposited on Si substrates.The morphology and luminescence characteristics of SnO and Ga2O3 films were analyzed.The study found that the morphology,thickness and luminescence characteristics of SnO and Ga2O3 films can be adjusted by adjusting the sputtering deposition time.Subsequently,a layer of nanoscale Nb2O5 film was sputter-deposited on the prepared SnO and Ga2O3 thin film samples to form a composite structure.The crystal structure of the composite structure prepared under different conditions was compared and analyzed with XRD analyzer.The luminescence characteristics of samples with different composite structures were studied.The study found that after depositing Nb2O5nano-films on SnO and Ga2O3 films,the ultraviolet luminescence peak intensity of the composite structure samples weakened and the defect luminescence peak intensity increased.?4?According to the PL curve compared by the test,the influence of preparation conditions such as sputtering deposition time and sputtering power on the fluorescence spectrum of the nanostructure coated with Nb2O5 film is given.The physical mechanism of the surface enhanced spectral characteristics of the nanoarray and the film before and after coating the Nb2O5 film was theoretically analyzed.The research results have important application value for the development of the fluorescent optical properties of Nb2O5 thin film materials,the enhancement of their luminous intensity,and the development of new Nb2O5 thin film optical applications.
Keywords/Search Tags:Nb2O5, Nanomaterials, photoluminescence
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