RRAM Device Based On Carbon Dots-PVP Composite Film And Study On Resistive Switching

The development of the information age is mainly due to the rapid updating of solid state storage and the emergence of new electronic devices.With the advent of the big data information age,new challenges are put forward in storage speed,unit erasure rate and data storage time of memory devices.Resistive random access memory?RRAM?is considered to be a promising device for future data storage applications due to its advantages of simple structure,high storage density,strong endurance and good resistive transition effect.Carbon quantum dots?CQDs?as a new type of fluorescent nanomaterials,have excellent fluorescence properties,good biocompatibility and potential applications in sensing,biomedicine,photocatalysis and optoelectronic devices,which have attracted much attention in recent years.Polyvinylpyrrolidone?PVP?is a nonionic polymer compound,which has become a research hotspot in recent years due to its good biocompatibility and excellent ductility.Nevertheless,the phenomenon that a single PVP material produces stable resistive switching?RS?needs to be developed,and doping CQDs into organic matter has attracted much attention in recent years.Therefore,this paper uses CQDs doping in the PVP to make the PVP stable resistive phenomenon by CQDs the surface functional groups,and to prepare flexible RRAM devices;Using the fluorescence properties of the CQDs,the performance of the RRAM is regulated by UV radiation to realize the optoelectronic combination application.The specific work is as follows:?1?Four types RRAM devices are prepared around different types of carbon quantum dots doped into PVP materials,and their resistance behavior is studied.Firstly,pure carbon quantum dots?UCQDs?,o-doped carbon quantum dots?OCQDs?and N doped carbon quantum dots?NCQDs?were successfully prepared by hydrothermal method and selected for characterization.The test results show that the as-prepared NCQDs has C-N bond and good response to UV light,which provides the basis for the subsequent preparation of optoelectronic devices.Secondly,Al/PVP/ITO devices,Al/UCQDs-PVP/ITO devices,Al/OCQDs-PVP/ITO devices and Al/NCQDs-PVP/ITO devices have been successfully constructed.Through the study of the RS of the above devices,it is concluded that the doping CQDs can make the PVP appear stable resistance phenomenon.In terms of the electrical properties of the devices,the resistance performance of the devices is optimal,and the corresponding electrical research is carried out by using the optimized devices.?2?Al/NCQDs-PVP/ITO devices are controlled by photoelectric stimulation,and their resistance behavior is studied.The results show that the device has no Forming process after illumination to achieve good resistive behavior.By adjusting the time of UV irradiation device,the on voltage and resistance state of the device are further regulated.The results show that the V_SETand HRS of the device decrease with the increase of illumination time,thus reducing the probability of device loss and prolonging the service life of the device.Interestingly,the application of photoelectric signal regulation in photoelectric logic operation and multi-layer image information storage was realized,and the flexible RRAM was successfully prepared.Furthermore,the CQDs was combined with other nanomaterials to prepare full carbon memristor to realize the function of carbon-based synaptic biomimetics.