Studies Of Magnetic Properties Controlled By Electric-Field In Resistance Random Access Memory

At present,as one of the most promising candidates for future non-volatile memories,resistive random access memory(RRAM)has attracted extensive attention of the researchers.RRAM with a simple sandwiched structure exhibits excellent scaling potential,high densities,low power consumption,high speed,and good endurance.In the field of spintronics,magnetization controlled by electrical has attracted great interests,which has been realized in various materials,such as metals,magnetoelectric multiferroics,and diluted nagnetic semiconductors.Coupling of resistance switching with magnetism is a typical example.Control both resistance and magnetism by electric field.The storage density will be improved greatly if resistance switching and magnetism switching are integrated into a device,and realizing multi-level memory.The content and results of studied in this paper:1.As the resistance switching layer,HfO2 films were deposited by a pulsed laser deposition(PLD)technique,and we achieved the the resistance switching device Ag/HfO2/Pt.The resistance switching characteristic and electric field controlled magnetism was measured in the device.After a series of experimental measurements and study,concluded:the Ag/HfO2/Pt device exhibits obvious multi-level resistance switching characteristics.The magnetism also exhibited multi-level change accompanied with resistance switching.TheAg conductive filaments and oxygen vacanciesfilaments lead to the multi-level resistance switching and magnetoelectric coupling.2.The resistance switching device Ta/ZnO/Pt was achieved by magnetron sputtering technique.The resistance switching characteristic and electric field controlled magnetism was measured in the device.The Ta/ZnO/Pt device exhibits obvious bipolar switching characteristics by DC voltage sweeping.In addition,there is a one-to-one correspondence between the magnetism of the device and its resistance states.Under application of an electric field,the concentration of oxygen vacancies change,promoting formation and dissolution of the oxygen vacancies conductive filaments.Besides,the barrier height varies,leading to the resistance switching and magnetism variation in the device.3.The resistance switching device Ta/SnO2/Pt was achieved by magnetron sputtering technique.The resistance switching characteristic and electric field controlled magnetism was measured in the device.The Ta/SnO2/Pt device exhibits obvious bipolar switching characteristics,moreover,multi-level resistance switching was observed in direction of positive voltage.The magnetism also exhibited multi-level change accompanied with resistance switching.The resistance switching and magnetism variation were controlled by the Schottky barrier and conductive filaments of oxygen vacancies.