The Studying Of Binary Metal Oxide Memristor And The Key Characteristics

Memristor,as the fourth basic circuit element,has been widely distributed in many fields such as information storage,logic operation,neural network,machine learning,etc.,and has become a research hotspot today.Among them,the binary metal oxide has the advantages of simple composition,good compatibility,and low cost,which are the current research hotspots of memristor resistance change materials,and HfO₂-RRAM have good fatigue resistance(¹0¹²),Retention characteristics,fast erasing and writing speed?ⁿs?,brightness and operating voltage?<0.5V?and other outstanding performance have received widespread attention.First,HfO₂ films were prepared by three methods:Magnetron Sputtering?MS?,Thermal Atomic Layer Deposition?TALD?,and Plasma Enhanced Atomic Layer Deposition?PEALD?.The different process parameters were used to study the film deposition rate and film properties.With the increase of sputtering power,the deposition rate of the MS-HfO₂ film gradually increases.At 120W RF power,the film uniformity is the best.With the increase of the deposition temperature,the film thickness of the TALD-HfO₂ film increases.The deposition rate increased first and then decreased at 150?,and the film quality was the highest at 150?;as the deposition temperature increased,the deposition rate gradually decreased.The crystallization quality of PEALD-HfO₂ film at 150?is higher than that of TALD-HfO₂ film at 300?.PEALD can prepare films with similar crystalline characteristics to those produced by TALD at a lower temperature.For the preparation of HfO₂ films of the same thickness,the magnetron sputtering method has a faster reaction speed and requires shorter preparation time.At the same temperature,PEALD is 2.4 times faster than TALD.TALD-HfO₂ film has the largest surface roughness,followed by MS-HfO₂ film,and PEALD-HfO₂ film has the smallest surface roughness.Secondly,an Au/Ti/HfO₂/Au structure memristor is constructed,and it is found that it has good switching characteristics and meets memory application requirements.Among them,the SET voltage of the device is distributed between 1V and 1.5V,and the RESET voltage is distributed between-1.18V and-0.92V.The SET/RESET voltage value is relatively balanced,and the change is controlled within 0.5V.The device shows good stability.Low-resistance state resistance is about 222?,high-resistance state resistance is about 218K?,switching ratio is about 10³;fatigue resistance exceeds 10³times,and retention characteristics exceed 10⁴s.Finally,a memristor test circuit is designed.It solves the problems that the common test system is complex and poorly targeted when performing electrical characteristics test on the memristor in pulse mode.Using virtuoso to complete the simulation study of the circuit.This circuit can output continuous short pulses and user-defined waveforms,which can realize fast switching between erase and write operations and read operations.At the same time,it solves the problem of current limit and memristor commutation during the test.The circuit structure of the test design is simple and has the advantage of low cost.In addition,the structure is also expandable,which can set and measure the memristor array.