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Application Research Of Single-stage FFC Circuit Based On SiC Power Device

Posted on:2021-02-10Degree:MasterType:Thesis
Country:ChinaCandidate:M AiFull Text:PDF
GTID:2428330626466302Subject:Electrical engineering
Abstract/Summary:PDF Full Text Request
SiC power devices have fast switching speed?small switching loss?and good reverse recovery characteristics,which can increase the application frequency of single-stage power factor correction(PFC)circuits,improve efficiency?power factor?and device stability?simplify circuit structure,reduce volume,Power consumption and design difficulty.Based on SiC materials and SiC / Si power devices that has been applied in the market,the following work is carried out in this paper:(1)Outline the characteristics,application costs,application prospects of SiC materials and SiC power devices and the advantages of SiC power devices be utilized in the field of power factor correction;Analyze its advantages and problems in the process of commercial application,and consider that it is a new development pattern that is gradually replaced and compatible with traditional Si material technology.(2)Set up a Saber simulation platform for SiC MOSFET switching characteristics to simulate the effects of parasitic parameters,driving resistance,and driving voltage on MOSFET switching performance;compare and analyze the effects of dynamic and static characteristics of SiC / Si power devices and changes in external application conditions on their performance;Build a negative voltage drive circuit and negative voltage circuit that can give full play to the switching performance of SiC MOSFETs,analyze the high frequency applications of SiC MOSFETs and bridge crosstalk.(3)Analyze the reverse recovery problem of PFC circuit at continuous mode(CCM).Using the excellent reverse recovery performance of SiC SBD can not only provide a solution for the reverse recovery problem in CCM mode,but also simplify the circuit structure and improve circuit stability;Build a single stage power factor correction circuit under test based on SiC power devices.(4)Experimental results show that the application of SiC power devices is of positive significance to the efficiency?loss?temperature stability and other performance indicators of PFC converter.Among them,when the boost PFC based on SiC power devices at 150 kHz,the efficiency increases from 84.5% to 90.4%,and the comprehensive power consumption decreases by 45.1%.When it is 100 kHz,the maximum temperature rise decreases by about 20.1?.The efficiency of Buck PFC increased by about 1% when AC 235 V was input.
Keywords/Search Tags:Silicon carbide, Power device, Switching characteristics, Power factor correction
PDF Full Text Request
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