Investigation Of Radiation Damage Characteristics For SIGe Power HBTs And Flexible PIN Diode

Over the past few decades,the integrated circuit industry has developed rapidly with the demands of capital and market,which has greatly promoted the development of computer science,communication engineering and other industries.However,the electrical properties of devices will change in the extreme application environment such as irradiation,which have a negative impact on the integrated circuits made of these devices.Therefore,it is necessary to study the impact of irradiation damage on the performance of devices.With the background of irradiation environment,the radiation damage characteristics of multi-finger germanium-silicon heterojunction transistors(SiGe HBTs)used in high-power communication systems(especially for the influence of emitter finger numbers on HBT's radiation damage characteristics)are studied firstly.At the same time,considering the limited use of devices with hard substrate in narrow space,the radiation damage characteristics of flexible devices(especially for the effects of bias condition,radiation fluences and intrinsic region size on diode's radiation damage characteristics)are studied by selecting flexible silicon diodes with simple structure and wide application in this dissertation.Results show that irradiation has a significant impact on the performance of SiGe power HBTs and flexible silicon diodes.For SiGe power HBTs,the damage caused by irradiation is mainly reflected in the increase of base leakage current and the decrease of small-signal power gain after irradiation.The more the number of emitter fingers,the greater the damage caused by irradiation.For flexible silicon diodes,the damage caused by irradiation is mainly reflected in the increase of output current after irradiation.The larger the intrinsic size of the device,the more obvious the damage caused by irradiation.The study and analysis of the phenomena above will provide theoretical guidance for large-scale applications of SiGe power HBTs and flexible silicon diodes in irradiation environment.