The Study And Design Of High Frequency Power SiGe Heterojunction Bipolar Transistors(HBTs)

With the development of the microelectronics and its industry, the study of it has been becoming deeply and thoroughly. Telecommunication's grow, especially the development of the third generation communication technology, besides SiGe devices and circuit's very good performances in high frequency and low noises, has made the SiGe technology one of the more important and more wide range developing technology in future telecommunication.This thesis's first part introduced the virtues of SiGe material, also its devices and circuits' good performances in high frequency field. Next it mentioned the history of SiGe, it also described the status of SiGe hi the world today and hi China today. This paper analyzed the gap between China and the world. At last of this part, the thesis introduced the study in this lab and the innovative part hi the study.The second part of the thesis discussed some problems in high frequency power BJTs, emphasized on some affects when they working in high currents. Analysed the difficulties and contradictions on designing the high frequency power device. The thesis introduced advantages of SiGe devices on the side of high frequency and power. This part made a foundation for the SiGe power HBT design.The third part of the thesis, also the core of the subject is on the basis of the transistor theory, the vertical and the horizontal (the layout) structures of the SiGe high frequency power HBT was designed according to the design guideline, and some parameters of SiGe stained layer that will be used in design was calculated. Finally, with the designed data, this thesis calculated the main parameters of the device, such as fT and power gain K,, and fmaz. Through the calculation, the device that has been designed has attained the design target. The device's direct current and alternating current characteristic has also been simulated with the math calculation soft Matlab and the circuit emulator Pspice.The last part of the thesis introduced the process of the SiGe high frequency power HBT, and some problems existed hi the process. Last, the thesis gived some measures hi improving the performance of devices.