Design Of Miniaturized Pulse Forming Networks Based On Gate Controlled Thyristor

Pulse forming network(PFN)is a kind of pulse power technology based on pulse modulation.For meeting requirements of miniaturized engineering applications,the applications of power semiconductor devices have become the major trend for the development of pulse power systems based on solid-state devices.More and more researches in recent years have been focused on the critical issues involved in the miniaturized development of solid-state PFN.Compared with traditional pulse switches,the power density of power semiconductor devices is relatively small due to the limitation of the devices'physical structure and fabrication process.And because of their own power loss,some of these devices are usually susceptible to the interference signal in the thermal energy and electromagnetic environment.In response to the above problems,this paper proposes a solid miniaturization pulse forming network based on Cathode-Short MOS Controlled Thyristor(CS-MCT).Firstly,the system structure and working principle of PFN are introduced by the pulse transmission line theory.The pulse front edge and flap-top ripple coefficient of quasi-rectangle pulsed waveform is analyzed by Kirchhoff's circuit theorem in detail.And it indicated that device parameters of LC transmission network and pulse switches have impact on the significance pulse parameters.In general,pulse power switches should have basic characteristics of low impedance,fast switching speed and stability.Secondly,a miniaturized PFN is designed via the combination of equivalent LC transmission networks and CS-MCT,which is characterized by the low-impedance and large surge current capability.By compared with Insulated Gated Bipolar Transistor(IGBT),the mixed-mode simulation has proved the feasibility of CS-MCT generating high-power pulse waveforms.Based on the analyzation of CS-MCT's structure and working mechanism,this paper proposed a kind of SPICE model characterized via the current conduction ratio,which could be used in SPICE simulation environment.And the static I-V characteristic and pulse discharge simulation curves of the SPICE model are highly coincident with the existing experimental data points.Finally,this paper showed test results and the related data of pulse forming networks based on CS-MCT.The quasi-rectangle pulse current waveform with pulse leading edge of 0.35?s,flat-top width of 3.05?s and current amplitude of 3.68kA could be obtained at the energy storage voltage of 1200V.And however,the pulse discharge waveform with pulse energy of 92.7 A~2·s at the condition of the energy storage voltage of 1000V and the pulse discharge frequency of 3Hz.By utilizing its characteristic of high power density,a discrete device of CS-MCT could realize high energy pulse output.And however,it could promote the development of PFN in the miniaturization engineering application to some extent.