| The development of power electronic equipment has greatly promoted the vigorous development of electric power industry,and the switch device is the core component of power electronic equipment.With the continuous high power and high frequency of power electronic devices,their electromagnetic interference to the surrounding environment is becoming more and more serious.Insulated gate bipolar transistor(IGBT)is a fully controlled hybrid device.Due to its advantages of high switching frequency,convenient control,high input impedance and low output impedance,IGBT is widely used in various occasions.But at the same time,due to the high dv/dt and di/dt in the switching process,the related EMC problems cannot be ignored.Therefore,the simulation and experimental research of EMI generated in the switching process of power semiconductor devices becomes more and more urgent.In this paper,Infineon's FF1400R17IP4 half bridge double IGBT module is taken as the research object,and its switching behavior characteristics,EMI generated in the conduction transient process are simulated and experimentally studied.Firstly,this paper analyzes the main sources of IGBT electromagnetic interference and expounds the theoretical basis of the research.Then,the static characteristics and switching behavior of IGBT are analyzed in detail,and the source of high voltage and high current change rate of EMI in switching process is pointed out.The Ansys software based on the finite element analysis method is used to build the parametric model of the high power IGBT module,and then the switch characteristics are simulated.The simulation results verify the correctness of the model.Then,in the Maxwell module of Ansys software,the corresponding solid three-dimensional model is established,and the transient magnetic field distribution and interference characteristics of IGBT are qualitatively analyzed,and the corresponding cloud chart of transient magnetic field distribution is obtained.After further modeling and simulation of IGBT and radiator,the magnetic field distribution diagram and the time domain waveform of the magnetic field around IGBT module and radiator are obtained.Then,aiming at the operation of high-power IGBT module under the condition of double pulse test,we use Simplorer and Q3 D to build the double pulse circuit and IGBT model respectively.Through the joint simulation and analysis of the electromagnetic interference in the operation process,the current waveforms at each pin of the IGBT module and the current distribution diagram of the IGBT module are obtained.The simulation results have a certain reference value for IGBT module design and EMC design,as well as for the layout of IGBT module auxiliary circuit and other components around.Finally,through the establishment of experimental platform,under the condition of double pulse test experiment,the current of each pin of IGBT module is measured by Rogowski coil.The electromagnetic interference is analyzed qualitatively and compared with the simulation results to verify the correctness of the simulation and experiment.There are 81 figures,1 table and 80 references in this paper. |
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