Comparative Research Of Si/SiC Hybrid Switch With IGBT And SiC MOSFET

High power density,high efficiency,high reliability converters have become the trend of power electronics technology development in the future.Among them,power devices are the key factors affecting converter performance.In medium and high power applications,traditional Si IGBT solutions with low switching frequency and high-cost emerging SiC MOSFET solutions cannot meet cost-effective of the converter.The Si IGBT and SiC MOSFET hybrid switch combines the low cost of IGBTs with the high performance of SiC MOSFETs.Its emergence provides new solution for high power density,high efficiency and high economic in medium and high power applications.In this paper,Si/SiC hybrid switch is applied in inverters to study the effects of on the performance improvement of inverters.From the perspectives of electrical,thermal performance and cost,Si/SiC hybrid switch and Si IGBT and SiC MOSFETs are comprehensively compared in terms of device characteristics,inverter performance,and economic benefits.First,this paper introduces the different gate drive control patterns of Si/SiC hybrid switch and the optimization of switching delay time with minimum switching loss in double pulse test.On this basis,the device characteristics of Si/SiC hybrid switch and IGBT and SiC MOSFETs of the same specification are compared and analyzed,including conduction characteristics,switching characteristics and reverse recovery characteristics of freewheeling diode.The experiments show that the Si/SiC hybrid switch has the advantages of low on-voltage,low switching losses and excellent reverse recovery performance.Secondly,the loss of the inverter of Si/SiC hybrid switch is analyze d in detail,which provides a basis for the design of the heat dissipation system.At the same time,it compared with the traditional IGBT and SiC MOSFET loss models,it provides a reference for the loss distribution and efficiency evaluation of the invert er.Then,a 5kW full-bridge inverter experimental platform was built.The experimental waveforms of the inverter,the temperature distribution and efficiency of the hybrid switch were tested and analyzed.The experimental results were compared between the Si/SiC hybrid switch and the IGBT and SiC MOSFET in inverter efficiency and power device temperature.The experimental results show that the Si/SiC hybrid switch maintains high efficiency,switching frequency and output power in the inverter.Finally,at the application level,the photovoltaic inverter is taken as an example to compare and analyze the economic benefits of Si/SiC hybrid switc h and IGBT solution and SiC MOSFET solution,and provide ideas for the selection of switch devices for different applications.