Embedded Driver Design Based On CMOS Process

With the further advancement of industrial automation,control systems have become more intricate.As an industrial-control processing chip,DSP has significant advantages like strong digital signal processing capability,good real-time performance and high flexibility.However,as an analog-digital hybrid chip,its design is realized through standard CMOS technology.In power-driven applications,DSP chips cannot directly drive power devices due to limitations in driving capability and operating voltage.Generally,additional power-driver-chips are required.The existence of an external driver chip increases the overall cost,and leads to low reliability and high system complexity.In light of preceding discussion,this thesis designs a switch driver embedded in DSP using GSMC 0.13?m CMOS Flash technology.Firstly,the working principle,general structure and design indexs of the driver circuit are introduced.On the basis of the traditional switch drive technology,the system design of push-pull switch drive circuit is accomplished.Secondly,sparked by the research and analysis of traditional Boost DC-DC converter,the 10 V power supply conversion circuit for driver is actualized.The driving circuit of 10 V driving level is contrived by using stacked pushpull structure with high voltage withstand and dynamic gate bias technology.Considering of the port ESD protection,the driver pull-down circuit adopts floating substrate design to ensure that the pull-down circuit can reliably be used to discharge during port ESD events.Based on the GSMC 0.13?m CMOS Flash process,the embedded driver that compatible with CMOS process is simulated and analyzed by Cadence Spectre.The simulation results show that the output voltage of the designed DC-DC converter is 10 V,the ripple coefficient of the output voltage is 0.048%,the load adjustment rate is 1.275,and the typical output current is no less than 40 mA,conversion efficiency is 90%.The designed push-pull switch driver circuit has a high output voltage of 10 V,a low output voltage of 14.2mV and a transmission delay time of 23.2ns,which meet the design requirements.