Study On The Communication Performance Of Nitride-based Light-emitting Diode

With the explosion of mobile data and video traffic,traditional wireless communication technology has revealed its inherent disadvantages.Visible light communication technology as a complementary communication technology attracts people's attention.In the field of visible light communication,the fabrication of semiconductor diode is very important,because the performance of diode determines the performance of the visible light communication system.Therefore,it is necessary procedure to simulate the parameters of semiconductor devices before fabricating.The simulation of device parameters can provide the optimal device structural value at the lowest cost,while reducing the production cycle of device fabrication.This paper uses Rsoft software to simulate the optical transmission efficiency of a 300 ?m long,10 ?m wide straight waveguide adding a semi-circular waveguide.It turns out the optimal radius of the semi-circular structure is 8 ?m and the transmission efficiency can reach 96%.In addition,this paper also simulates the branched waveguide and the coupled waveguide.The simulation results show that the optical transmission efficiency of the branched waveguide is higher than that of the coupled waveguide when the waveguide structure has the same length and width.The optical transmission efficiency of the branched waveguide is inversely proportional to the degree of bending of the waveguide.The coupling efficiency of the coupled waveguide is proportional to the length of the coupled waveguide,and inversely proportional to the coupling distance between the waveguides.Generally,each part of the visible light communication system is discrete and independent,which is not conducive to the accuracy and reliability of signal transmission.Therefore,based on the excellent physical and chemical properties of materials such as silicon and Ga N,a photonic integrated system on a chip that integrates light sources,waveguides and receivers was prepared through semiconductor processing.Scanning electron microscopy shows that the fabrication system had a good structure and a flat appearance.We also measured the volt-ampere curve,voltage and capacitance curve,electroluminescence spectrum and detection response spectrum of the device.The experiment data shows that the turn-on voltage of the device is 1.12 V.A negative capacitance phenomenon occurs when the scanning frequency is below 700 k.The emission spectrum and the detection spectrum overlap in the range of 430-450 nm,indicating that the device can be used as a transmitter and a receiver in the overlapping wavelength range,and can achieve duplex Communication.The communication rate of the on-chip photonic integrated system can reach 100 kbps.