Research On The Performance Of Silicon-based GaN Visible Light Chips

With the continuous improvement of communication technology,optical communication will be increasingly important,and there is no mature visible light communication system that can be illuminated and monitored by using the same process with the same integration.However,the current research shows the coexistence of light emission and detection of photonic devices made of gallium nitride materials.In this paper,we will use gallium nitride materials to make quantum well diodes for visible light communication with simultaneous light emission and energy detection.By integrating quantum well diodes and optical waveguides on Group ? nitrides of metal bonded silicon substrates,an integrated multi-component system platform based on a vertical structure quantum well diode was implemented for the first time.This system uses all the same source quantum well diodes manufactured by all existing standard GaN chip manufacturing processes as LED and PD,respectively,and forms a waveguide to establish an on-chip optical path between the LED and PD.The PD absorbs the light emitted by the adjacent LEDs coupled through the optical waveguide to induce a photocurrent proportional to the LED injection current.A PD can monitor multiple LEDs at the same time and identify the system 's The difference of individual LEDs,thus forming an on-chip power monitoring system.In this paper,the use of vertical structure blue light-emitting diodes can both emit light and detect light performance to form an on-chip one-to-many energy detection system,using PD to distinguish different signals of different LEDs.And because PD and LED are homogeneously integrated,that is,the status of the two can be interchanged.In the future,the chip can be used as a lamp on daily roads and construction sites.As the lamp emits light,it also has a monitoring function,which fully reflects the power of the multi-function chip.