Principle And Experimental Research Of Single Photon Memristor Based On Avalanche Effect

In recent ten years,in order to realize the large-scale industrial application of memristor,foreign countries,especially the United States,have entered the white hot stage of memristor related research.Since 2018,relevant researchers at the University of Michigan have prepared a kind of chip embedded with memristor devices,which is easy to integrate into silicon based electronic devices.This research has been applied to CPU,machine learning and even GPU.From the definition of memristor to now,scientists have made a lot of efforts to carry out all-round research work,but until now,memristor is not like capacitors,resistors,inductors and other components for large-scale production.Therefore,how to make memristor mass production and adapt to the market has become one of the hot spots.In this paper,based on the reverse characteristics of single photon avalanche diode,a large-scale single photon memristor is proposed.By means of physical mechanism,equivalent model,nonlinear dynamic behavior and experimental test,the single photon memristor device which is easy to be mass produced is analyzed and verified.The main work content:1.Based on the principle and analysis of avalanche effect single photon memristor,the physical mechanism of continuous resistance variation of memristor is clearly constructed by avalanche effect and carrier drift diffusion principle,and a new single photon memristor is proposed.The characteristics of memristor are analyzed from hysteresis loop,frequency characteristic and passive system.Through the establishment of the experimental platform,it is verified that the single photon memristor presents a hysteresis loop with an amplitude of 1.25 V at the working frequency of 175 KHz,and shrinks to a linear resistance with an amplitude of 12.5 m V at the frequency of 5.0 MHz.2.Based on the avalanche effect single photon memristor model and analysis,according to Kirchhoff's theorem,the equivalent circuit model of single photon memristor is built,and the model is optimized by SPICE software.Based on the design of traditional bipolar devices,a bipolar optical controlled general memristor is built and verified by simulation.According to the principle of carrier drift and diffusion,a mathematical model is established and verified by Matlab.The experimental results show that the performance indexes of 1.25 V amplitude,21 MHz critical frequency and 50 ?s quenching time are in good agreement with the simulation.3.Based on the nonlinear dynamic behavior of single photon memristor in avalanche effect,the nonlinear behavior of single photon memristor is analyzed from three aspects: two threshold behavior,chaos phenomenon and non compact hysteresis loop.Through the Candence Spectra software,the simulation results show that the single photon memristor based on avalanche effect presents a two threshold behavior at the power supply voltage of 5.35 MHz and 20 V.At 4.25 MHz and 10 p F,the single photon memristor presents a non compact hysteresis loop.In the case of multiphoton effect,the chaos of single photon memristor appears.