High Efficiency PA Based On GaN HEMT

Power amplifier is the key part of wireless communication system,its output power,efficiency and linearity will all directly affect the performance of the whole wireless communication system.While the higher-speed development of wireless communication and different application scenarios make the spectrum more and more crowded.In order to solve the problem of spectrum utilization and transmission rate,wireless systems generally develop to higher spectrum and higher order modulation methods,such as OFDM,256 qam,etc.these higher efficiency modulation methods generally have a high PAPR,which requires Higher requirements to PAs.The representative of the third generation of semiconductor material,Ga N have many advantages,such as high breakdown voltage of VDS and VGS,high electron mobility,good frequency characteristics,wide bandgap,high current density,high thermal conductivity and so on.Ga N support CW mode and pulse mode.Ga N are very suitable for high efficiency,high frequency,wide bandwidth and higher power applications.Ga N have broad applications and will gradually replace Ga As and LDMOS.In this paper we use Qorvo's Ga N HEMT and Modelithics-Qorvo-Ga N device models by ADS simulation software.And finally design a three stage cascade amplifier work at S-band,the output is up to 10 W and the efficiency reaches 30%.