Research And Design Of 5G Mobile Communication Micro Base Station RF Power Amplifier

The rapid development of mobile communication technology has carried out five technological innovations in just a few decades.5G communication technology has a wide range of application prospects,such as VR,auto driving,tele-medicine,smart city,etc.With the popularization of 5G signals,the operating frequency band is approaching high frequency,and the number of 5G base stations will be much larger than the number of 4G base stations.Compared with acer base stations with long construction periods and difficult coordination,micro base stations have the advantages of small size and light weight.Therefore,micro base stations are currently the focus of 5G base station construction.The RF power amplifier is located at the end of the transmitter and is an indispensable module of the wireless communication base station transmitter.The output power is transmitted through the antenna.The PA is the device with the highest nonlinear distortion,the highest power consumption,and the most heat generation in the base station.And efficiency directly affects the transmission performance,overall power consumption,stability and temperature of the base station.In order to meet the requirement of 5G micro base stations for high linearity and high output power of power amplifiers,this paper uses Ga As HBT technology to implement the design of an NR41(New Radio 2496MHz-2690MHz)monolithic class F power amplifier.The power amplifier uses a three-stage to amplify the signal.Each stage is powered by a dual power supply adaptive bias structure with Vcc=4.5V and Vref=2.85V.The new adaptive bias improves the linearity of the power amplifier very well and has a temperature compensation effect on the power tube.The three stages work in Class A,Class AB,and Class AB,respectively.The three stages area are360?m~2,1200?m~2,7200?m~2,respectively.The layout area of the chip was 1.1mm*1.4mm.The output matching network with harmonic suppression was realized by the laminate patch method,and used HFSS to carry out three-dimensional electromagnetic simulation on the substrate to ensure that the substrate has good electrical properties.The final laminate area was 7mm*7mm.Compared the results of schematic simulation and joint simulation,after each index meets the requirements,tape-out was performed.Experimental test result shows that The power amplifier achieved a small signal gain of 35.2d B and the gain flatness was 0.5d B.The output power at 1d B compression point reached at 33d Bm and the saturated output power was 34.5d Bm.When the PA was saturated,the power added efficiency reached at 49.7%.When the rated output power was 25d Bm,ACLR was-45.6d Bc.All the major performance met the expected requirement pretty well.