| At present,the performance of nano electronic devices mainly depends on the semiconductor materials used.In order to enhance the application of semiconductors in the high precision field,the materials used in modern photoelectric nano devices are gradually developing towards wider band gap.As the third generation semiconductor,boron nitride?BN?not only has superior physical properties such as ultra-wide band gap,high saturation electron drift speed,but also has stable chemical properties such as radiation resistance,wide working temperature range,etc.It is a new material for making high-efficiency and energy-saving photoelectric devices in special environment.Boron nitride nanotube?BNNT?not only inherits the good properties of BN,but also shows its unique advantages.It can be doped with PEDOT:PSS high molecular conductive polymer to produce BNNT composite film,and excellent experimental carrier was obtained.Because the contact resistance will affect the noise frequency characteristics,output power,thermal stability and reliability of the nano devices,the subject first used magnetron sputtering technology to prepare ohmic contact electrodes and measured contact resistance of different kinds of Boron Nitride Nano-films with the help of probe station.After data processing,the specific contact resistivities are 1.59 × 10-2n·cm2 and 1.19 × 10-3n·cm2 respectively.The higher the doping concentration is,the smaller the specific contact resistivities are.The specific contact resistance of the annealed electrode is reduced to 6.49 × 10-3?·cm2,which proves that the annealed electrode can effectively improve the ohmic contact.The energy band structure and state density of the contact interface were studied by Materials Studio.It is of great significance to China's major strategic goals such as "China made 2025" and"Internet plus”,and seize the opportunity of developing the new strategy of”changing the road and overtaking”. |
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