Studies On Preparation And Electrical Properties Of GaSb-base Ohmic Contact

This essay is generally focus on the research of GsSb ohmic contact electrical characteristics, including the background and the general introduction of domestic&foreign development. Based on the study, the basic properties of semiconductor laser and Ⅲ-Ⅴ material characteristics are introduced. The surfaces passivation&vulcanization of GaSb semiconductor, preparation process and the electrical characteristics of GaSb ohmic contact are all investigated in detail.Meanwhile, GaSb semiconductor ohmic contact metal structure is designed on the basis of analysising the principle of metal semiconductor contact and ohmic contact. In this context, We elaborated the formation mechanism of N-GaSb ohmic contact, the effect to contact electrical resistivity caused by annealing temperature and time after the ohmic contact, and the influence to contact electrical resistivity caused by GaSb surfaces passivation&vulcanization. Electrical properties of the GaSb ohmic contact is tested by SEM and ohmic contact resistance testerBased on the research and experiment above, we can reach a conclusion that the surfaces passivation&vulcanization and the adjutsting the annealing temperature&time can reduce the contact resistance of ohmic contact. The overall performance of GaSb semiconductor laser will benefit from this research.