Impact Of The NiSi_1-xGe_x Composition On The Electrical Properties Of Ge Channel Schottky-Barrier PMOSFETs

As modern CMOS integrated circuit technology enters the nano-era,some physical phenomena begin to appear in MOS devices,such as short channel effects,speed saturation effects,etc,which makes it difficult to further improve the performance of Si MOSFETs and the overall performance of the circuit.To overcome this bottleneck,high mobility semiconductors,such as SiGe?Ge??/? materials,have been considered as the alternative channel materials to decrease to improve device performance and speed by increasing channel carrier mobility and reducing channel resistance.Among them,Ge is the most promising channel material for pMOSFET devices due to its high hole mobility.However,the scaling device size also makes the source/drain parasitic resistanc more severely inhibit the drive current.Among them,the source/drain contact resistance Rcsd is increasing proportion of the source-drain parasitic resistance.Therefore,reducing Rcsd is an important problem need to be solved in a scaled device.At present,Si1-xGex is the mainstream source/drain material,and the electrical properties of its silicon germanide have not been systematically studied.In addition,Ni is still the most popular source and drain metal material.In this paper,the NiSi1-xGex alloy samples with different Ge contents were prepared using the current silicidation technology of Ni,and their electrical properties were studied and optimized,such as sheet resistivity,specific contact resistivity and work function.Finally,simulate its effect on the performance of short channel devices in TCAD.