| Bismuth-based double perovskite materials originated from bismuth-based perovskite materials.Because of the wide selectivity of double-perovskite materials,it is easy to adjust the ratio between elements,and it has broader development potential.More and more scientific research work focus on bismuth-based perovskite materials to bismuth-based double perovskite materials.Information storage technology has been paid more and more attention in the 21st century,because the traditional storage technology has gradually appeared a bottleneck,and people hope to use new materials and new technologies to prepare the next generation of higher capacity and stable performance storage devices.The resistance effect of bismuth-based double perovskite materials bismuth nickel manganate and bismuth iron manganate were studied in the paper,and they may be applied to RRAM equipment in the future.At the same time,the optical properties of the films were explored in the paper to investigate the optical memory using optical signals as conduction.?1?Bi2Fe Mn O6 thin films were prepared on Pt/Ti/Si O2/Si substrates,and the resistive switch effect of Au/Bi2Fe Mn O6/Pt/Ti/Si O2/Si device structures was studied.The results show that the structure of the Au/Bi2Fe Mn O6/Pt/Ti/Si O2/Si device scanned by the forward and reverse voltages has a resistive switching effect.?2?Bi2Fe Mn O6 thin films were deposited on the FTO/Glass substrate,and they were annealed at different temperatures in N2 atmosphere.The surface morphology of the film was studied using a scanning probe microscope.The results show that the film also has a significant resistive switching effect.From the perspective of space charge limiting current and Schottky mechanism,the conductive mechanism of the thin film is analyzed.The photoelectric characteristics of films were also studied,and the conduction mechanism of the thin film in the dark was analyzed.?3?Bi2Fe Mn O6 thin film device was deposited on the ITO substrate,and its photoelectric effect was studied.X-ray electron energy spectroscopy and X-ray diffraction spectroscopy were used to characterize the element's chemical valence and phase characteristics.The band gap of the thin film material was calculated using the first principle,and the band gap of the material was estimated using ultraviolet light and visible light.The results show that the Bi2Fe Mn O6 film has photoelectric properties,and the ferroelectric polarization process can control the switching photoelectric effect.?4?Bi2Ni Mn O6 thin film were deposited on the La Ni O3/Si substrate,and annealed at different temperatures.The results show that the Bi2Ni Mn O6 film measured at room temperature has a hysteresis loop,indicating that it has room temperature ferroelectricity,and the pinning beam waist effect appears as the annealing temperature increases.From the current-voltage characteristics,the thin film exhibits a transition process from near-linear conductivity to diode effect with rectification effect.By analyzing its conduction mechanism,it is found that the sample with diode effect has obvious space charge effect. |
PDF Full Text Request