Design And Study Of Bidirectional Switch Band-to-Band Tunneling Field Effect Transistor

According to the description of Moore's law,with the continuous development of integrated circuit technology,the size of transistors is continuously reduced,the integration level is higher,and the performance is improved.While the scale of the device is reduced,the undesirable effects are more and more obvious.Today,micro-electronics technology development has entered the nano-level,MOSFET(metal oxide semiconductor field effect transistor),the basic unit of integrated circuits,as the device size reduce,a short channel length leads to a variety of serious undesirable effect.The high integration leads to the increase of power consumption,and the internal temperature of the chip increases accordingly,which increases the failure efficiency of the whole system.Moreover,due to the conduction mechanism of MOSFET transistors,it is difficult to break the limit of 60mV/dec at room temperature.The tunneling field effect transistor(TFET)is based on the principle of quantum mechanical band tunneling,which makes the sub-threshold swing of tunneling devices exceed the limit of 60mV/dec.The tunneling FET is based on ultra-thin semiconductor wafers or nano-wires that reduce the power consumption of CMOS transistors by about 100 times.Because of its P-I-N structure,the tunneling transistors cannot replace the MOSFET because of its interchangeable source/drain region and bidirectional switch characteristic.In this paper,a bidirectional switch Band-to-Band tunneling field effect transistor(B-TFET)structure is proposed,which also has the characteristics of low sub-threshold swing and low power consumption of the traditional tunneling transistor,and effectively suppress the reverse leakage current.In this paper,SILVACO TCAD simulation software is used for all the simulation of proposed bidirectional Band-to-Band tunneling field effect transistor.The influence of different device parameter changes on the performance of the proposed tunneling field transistor is simulated and the influence mechanism is analyzed.Two optimized structures are proposed to save the chip area and improve the gate-control capability.It has implications for the design of future tunneling field effect transistors.