Research On Large Signal Model Of GaAs PHEMT Switch Device

RF switching devices are key components in a variety of modern infinite communication systems.Compared with traditional PIN switching devices,Ga As p HEMT switching devices are widely used in RF circuits due to simple bias network,low DC power consumption,fast switching speed and high integration.Accurate Ga As p HEMT switching device models are of great importance in improving device performance,shortening the design cycle of related integrated circuits,reducing design costs,and increasing the yield of integrated circuits.In this paper,the large-signal model of Ga As p HEMT switching device is systematically studied for the domestic Ga As p HEMT production line using empirical basis model and size scaling model modeling method.The main contents include:(1)The fabrication materials and the underlying physical structure of Ga As p HEMT devices had been studied.What has been described are the how the Ga As p HEMT devices work and the Electrical characteristics of it.An advanced measurement system is used to characterize the considered Ga As p HEMT switches has been briefly introduced,and the de-embedding technology in the device modeling process has been studied.(2)The mathematical equations of three commonly used empirical HEMT largesignal models has been analyzed in detail,and simulated results of the Ga As p HEMT device had verified.(3)It has presented an accurate small-signal model for multi-gate Ga As p HEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5?m Al Ga As/Ga As p HEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.(4)The detailed extraction process of the large signal model of Ga As p HEMT RF switching devices has been described in detail.Size scaling modeling technology is applied in this work.