Establishment And Optimization Of InGaAs/GaAs PHEMT Device Model

Since the concept of heterojunction was put forward in 1951,semiconductor devices based on heterojunction theory have developed rapidly.Compared with homojunction devices,heterostructures have the advantages of high electron concentration,high mobility,etc.,which have prompted the development of semiconductor devices in the microwave/millimeter wave field.Therefore,since the PEMMT device was invented in 1985,PHEMT technology has been called the focus of research in various countries.Moreover,due to its excellent high-frequency characteristics,power characteristics and low noise characteristics,it has become one of the most promising devices in the development of microwave monolithic integrated circuits.In recent years,people's demand for convenient living has been increasing,accelerating the rapid development of wireless communication systems in recent years,and wireless communication is gradually replacing wired communication,making both academic and related business communities invest a lot of human resources and Physical resources are in related research fields.Therefore,the related research on devices and circuits has also gradually received attention.The model of the PHEMT device plays a crucial role in the design of microwave monolithic integrated circuits(MMICs)and functions as a bridge between circuit design and process design,which can improve the accuracy of circuit design and reduce the number of process iterations.,Reduce product costs and shorten product development cycle.However,in practical circuit applications,the PHEMT device always operates under large signals.At this time,the device will exhibit its non-linear characteristics.The model that can accurately describe the nonlinear characteristics of the device under large-signal conditions is become a major research of universities and semiconductor companies.Based on this thesis,the small signal model of Ga As PHEMT device will be established first,and the series resistance,parasitic inductance,parasitic capacitance and intrinsic parameter extraction method in the small signal model will be analyzed.Then based on the small-signal model,using ADS EEHEMT model and its temperature parameters to establish an equivalent model with predictable temperature changes,and compare it with the measurement results of the product.Finally,based on the EEHEMT device model,by optimizing the function equations,the original EEHEMT model is improved to describe the inaccuracy of the self-heating effect and capacitance characteristics of the Ga As PHEMT device,so as to achieve the purpose of optimizing the model.