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Thermal Characteristics Research Of TSV Array In Three-dimensional Integrated Circuit

Posted on:2020-07-01Degree:MasterType:Thesis
Country:ChinaCandidate:X Y LuoFull Text:PDF
GTID:2428330602950791Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
With the increasing integration of chips,three-dimensional integration technology based on through-silicon via(TSV)has emerged.It can provide vertical interconnection between chips,which reduces the global interconnect length,chip interconnect delay and power consumption,thus becomes one of the key technologies to achieve high-density integration of the system.However,as the manufacturing process size decreases,the self-heating effect of the interconnect line is intensified,the power density of the chip itself increases,and the poor thermal conductivity of the bonding layer material,which directly leads to severe thermal reliability.Therefore,the study of thermal characteristics of TSV arrays in three-dimensional integrated circuits is urgent.In this paper,based on array structure parameters,array arrangement and electrothermal collaborative optimization,the thermal characteristics of TSV arrays are analyzed systematically using COMSOL finite element analysis software.It is hopeful that this paper will provides a powerful reference to the future thermal reliability of TSV arrays in 3D integrated circuits.Firstly,based on the research status at home and abroad,the basic parameters of TSV array are determined.The orthogonal test is used to obtain the primary and secondary order and the optimal parameter combination of TSV array structural parameters including TSV radius,spacing,insulation thickness and material.The multivariate quadratic regression equation between the above four structural parameters and the maximum temperature of the array is established,and the accuracy of the equation is verified by analyzing the error between the simulation results and the equation calculation results.Secondly,in order to reflect the advantages of the new triangular arrangement in heat dissipation performance proposed in this paper.The equivalent thermal conductivity model of TSV arrays is constructed,and its correctness is verified.By calculating and comparing the equivalent thermal conductivity of regular triangle and traditional rectangular TSV arrays,it is concluded that the thermal conductivity of regular triangle arrays is better than that of rectangular arrays.At the same time,the temperature distributions of TSV basic elements and 4-TSV arrays under the two above arrangements are compared and analyzed by finite element method to further verify the above conclusions.Finally,based on the mechanism of mutual coupling of electric field and thermal field,the effects of TSV spacing and oxide thickness on crosstalk in 2-TSV and 4-TSV and are analyzed by COMSOL,the signal integrity and its transient thermal response under DC signal,periodic pulse and ESD pulse in distributed,grouped and the repeated array arrangement are analyzed collaboratively,and the factors affecting the electrothermal response such as signal pulse width and amplitude is analyzed.It is strive to obtain an array arrangement with small crosstalk and good heat dissipation performance.
Keywords/Search Tags:Three-dimensional integrated circuit, Through silicon via, Thermal analysis, Finite element method simulation, Electro-thermal coupling
PDF Full Text Request
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