Study On Preparation Technology And Electrical Properties Of AZO Thin Film

ZnO thin film doped by Al has gradually replaced indium tin oxide?ITO?film and become the most widely studied semiconductor oxide film due to its abundant non-toxic raw materials,low manufacturing cost and excellent photoelectric properties.ZnO/Al₂O₃nanostructured laminated thin films prepared by ALD method have become a kind of material choice for their wide range of resistivity,which meet the resistance requirements of the conductive layer of the micro-channel plate dynode.This paper do the researches based on the requirements of micro-channel plate dynode conductive thin film.We prepare AZO thin films with high resistance by atomic layer deposition?ALD?and Sol-gel method respectively.Then we test the thin film samples with scanning electron microscope?SEM?,atomic force microscope?AFM?and film square resistance test.Through discussion and analysis of the test results,we investigate the effects of deposition temperature,lamination ratio and annealing treatment on the surface morphology and electrical properties of ALD-ZnO/Al₂O₃ films and the effects of film composition and heat treatment on the surface morphology and electrical properties of sol-gel-azo films.The following studies were carried out:1)The temperature window of ZnO/Al₂O₃ thin film prepared by ALD is between170?to 200?.When the deposition temperature is over 170?,the order of magnitude of ZnO/Al₂O₃ film square resistance is 10¹² and the resistance of thin film square prepared resistance can meet the resistance requirements of the conductive layer of the micro-channel plate dynode.2)For the ALD-ZnO/Al₂O₃ thin film with 50%Al₂O₃ cycle percentage,when the sub-circulation coefficient k?10,we can observe obvious laminated structure in the cross-section SEM test picture of the film.When the sub-circulation coefficient 4?k?7,the square resistance magnitude of AZO thin film ranges between 10¹² to 10¹⁴.This can meet the resistance requirements of the conductive layer of the micro-channel plate dynode.3)With the increase of Al content,the grain size of sol-gel-azo film decreased,and the surface roughness of the film decreased.The resistance of the film increases with the increase of Al content.When the Al content is between 50%and 80%,the order of magnitude of the film square resistance is within the range of 10¹²¹0¹⁴,which meets the resistance requirements of the conductive layer of the micro-channel plate dynode.4)With the increase of annealing temperature,the Sol-gel-AZO thin film surface roughness is reduced.When the annealing temperature is 550?,the surface roughness is0.810 nm and the resistance of the film declines with the increase of the annealing temperature.With the increase of annealing time,the grains in the film grow up gradually and tend to be hexagonal structure,and the resistance of the film first increases and then decreases.