High-Performance Control And Drive IC For High-Current Power MOS

MOSFET is a metal-oxide-semiconductor field effect transistor.It is a voltage-controlled current-type device.It has many advantages such as high input impedance,fast switching speed and simple driving.It has been widely used in electronic relays,switching power supply,inverters and other circuits.Although power MOS has so many advantages,its ability to withstand short-term high temperature?high current? high voltage and other overload conditions is weak,so its control and driver chip must be reasonably designed in application.Based on that,this thesis studied and designed a high-performance and high-current power MOS control and drive IC which meets the market demand and is used for motor control on the principle of strong controllability and high reliability.In this thesis,the research background and actuality of control and drive IC for high current power MOS at home and abroad are analyzed,and the working characteristics and driving mode of the motor are explained in detail.According to the characteristics of power MOS and motor,and considered many factors affecting the reliability of control and drive IC of high current power MOS,this thesis constructed the overall structure of control and drive IC of high current power MOS.Firstly,according to the specific parameters of the high current power MOS,the specific design indexes of the control and drive IC of the high current power MOS are proposed.Then,specific protection schemes are formulated according to the possible failure conditions.Each protection module starts with the basic principle,and analyses the characteristics and advantages of each scheme.Finally,based on the 0.35 m process platform,the specific circuits was built,including:high-voltage power-on and internal power supply voltage generation circuit,bandgap reference generation circuit,over-current protection and short-circuit protection circuit protection circuit,over-temperature protection circuit,driving circuit and so on.Then,the cadence spectre simulation tool is used to simulate each module of the circuit and the whole circuit to ensure that each module can achieve the expected target in any process angle.At last the circuit design,simulation and verification,chip tape-out and test work was completed.The test results showes that the control and drive IC of the high current power MOS can work at 10 V to 13 V supply voltage.The overtemperature protection threshold is 175 ?,the switch hysteresis is 25 ?,the overcurrent protection current is300 A and the short circuit protection current is 500 A.