Design And Implementation Of The Diode Voltage Characteristic And Temperature

With the rapid development of electronic technology in China,various types of electronic components are required.The quality of these devices will directly affect the performance of the product.Crystal diode is the most commonly used component in electronic technology.Its core is the PN junction.Its electrical parameters may have a great impact on the performance of electronic products.In particular,the reverse leakage current of a diode is a very important parameter.Improper selection of this parameter may cause electronic products to not work properly or even cause serious safety accidents such as burnout,explosion and so on.This article first analyzes the basic characteristics of semiconductor materials,focusing on the internal structure of the diode,voltage characteristics and capacitance characteristics,and discusses in detail the diode at different temperatures,different forward and reverse bias,reverse saturation current PN junction Case.And on this basis,the use of bridge-type input circuits,microcontrollers AT89S51,ICL7650 composed of precision programmable amplifier and ADC0804 analog-digital conversion,to achieve the weak signal acquisition,amplification,analog-digital conversion and display functions.Completed a diode reverse leakage current tester.Keil C51 software provides rich library functions and powerful integrated development debugging tools,full Windows interface,Through the programming software to achieve the purpose of correction and improve the accuracy of the test.Using IN4001 as the tested diode,the results show that:(1)the characteristics of the diode is greatly affected by temperature,when the temperature increases,its reverse current increases exponentially.Silicon diode device for each additional 8degrees of temperature,the increase in the reverse current will be obvious.(2)When the temperature increases,its forward voltage drop will decrease,for every 1 degree increase in temperature,the forward voltage drop will decrease by 1.85 mv,which indicating that the diode element has a negative temperature coefficient.Under the influence of different temperatures and the positive and negative voltages,the tester is working properly,The resolution of the reverse current is up to 0.1nA,and the error rate reaches 1.79%,which is a good design task.