The Design And Simulation Of The Readout Circuit Of Mg₂Si Infrared Detector

In recent decades,infrared imaging technology has been widely used in various fields of society,and infrared imaging technology has become a promising research field.Infrared detectors and readout circuits,as the core components of infrared imaging technology,are the focus of research.The readout circuit is the key part of the infrared detector signal reading.It is of great significance to study the high performance and high linearity readout circuit.The main research content of this paper is the design and simulation of the readout circuit of Mg₂Si infrared detector.Based on the research of Mg₂Si heterojunction prepared in our laboratory,a Mg₂Si infrared detector readout circuit suitable for 16×16 array was designed.According to the structure and performance parameters of the Mg₂Si infrared detector,a capacitive feedback transimpedance amplifier-type integral amplification structure is adopted as the main structure of the readout circuit.The overall circuit designed includes two parts,an analog circuit and a digital circuit,which are suitable for reading a weak electrical signal generated by the infrared radiation of the Mg₂Si heterojunction.The analog circuit designs an operational amplifier,an integral amplifier circuit,a sample and hold circuit,a buffer isolation circuit,and an output buffer circuit according to the requirements of the index.The digital circuit uses a 16-bit shift register to design a row-row scan circuit and a frequency-divided timing control circuit with adjustable duty cycle.Finally,the Cadence software is used to simulate the analog circuit amplifier,integral amplifier circuit and sample-and-hold circuit.At the same time,the Quartus II software was used to verify the simulation of the row and column scanning circuit and timing control circuit of the digital circuit.The simulation results of each module are good,and the overall linearity of the readout circuit reaches 99.7%,which is the expected design index.