| Infrared detection is widely used in civil,industrial,military,medical,biological,geological and other fields,with the development of infrared detection technology.Higher resolution,higher sensitivity and larger detection angle have been widely attracted for Infrared Detection.Optical components that fabricated by traditional methods could not match the requirement,due to the complexity,weight and size.Small diameter lens and lens array are widely used in the fields of beam shaping,optical devices interconnection,and three-dimensional imaging enhancement,due to small size,light weight,easy integration and array.The infrared detector with micro-lens array can improve the equivalent light sensitive area of the device,and enhance the performance of the detector without increasing the noise of the device.In order to meet the near-infrared requirements of 1-3 microns,the infrared detector needs to design a specific size of micro-lens array.Compared with the traditional infrared detector,the infrared detector with micro-lens array has better signal-to-noise ratio and higher sensitivity.Because the fabrication technology of micro-lens array is complex,it also requires higher requirements.This paper studies InP-Based PIN-type infrared detectors.The content as follows:1.The size of the micro-lens array is designed.The thickness of photoresist needed for photoresist hot-melt method is calculated.And explain the influence between microlens and micro-lens array.2.A technology of making PIN infrared detector with micro-lens array is designed.The effects of prebaking on exposure and development are studied.The effect of hot-melting on micro-lens array is studied.3.The uniformity,detection rate,responsivity and detection angle of PIN type infrared detectors with and without micro-lens array are analyzed. |
